Transistor Bd679 Và Bd680 Dùng Cho Mạch Darlington

BD679 Transistor Datasheet

Name: BD679

Material of transistor: Si

Polarity: npn

Maximum collector power dissipation (Pc): 40W

Maximum collector-base voltage (Ucb): 80V

Maximum collector-emitter voltage (Uce): 80V

Maximum emitter-base voltage (Ueb): 5V

Maximum collector current (Ic max): 4A

Maximum junction temperature (Tj): 150°C

Transition frequency (ft): 1MHz

Collector capacitance (Cc), Pf: -

Forward current transfer ratio (hFE), min/max: 750MIN

Manufacturer of BD679 transistor: STMicroelectronics

Package of BD679 transistor: TO126

Application of BD679 transistor: Darlington, Power

BD680 Transistor Datasheet

Name: BD680

Material of transistor: Si

Polarity: pnp

Maximum collector power dissipation (Pc): 40W

Maximum collector-base voltage (Ucb): 80V

Maximum collector-emitter voltage (Uce): 80V

Maximum emitter-base voltage (Ueb): 5V

Maximum collector current (Ic max): 4A

Maximum junction temperature (Tj): 150°C

Transition frequency (ft): 1MHz

Collector capacitance (Cc), Pf: -

Forward current transfer ratio (hFE), min/max: 750MIN

Manufacturer of BD680 transistor: STMicroelectronics

Package of BD680 transistor: TO126

Application of BD680 transistor: Darlington, Power